Multi-etch process using material-specific behavioral parameters in 3-D virtual fabrication environment
US8959464B2 · kind B2 · utility
12Cited by
1References
25Claims
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A virtual fabrication environment for semiconductor device structure development is discussed. The insertion of a multi-etch process step using material-specific behavioral parameters into a process sequence enables a multi-physics, multi-material etching process to be simulated using a suitable numerical technique. The multi-etch process step accurately and realistically captures a wide range of etch behavior and geometry to provide in a virtual fabrication system a semi-physical approach to modeling multi-material etches based on a small set of input parameters that characterize the etch behavior.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.