Lattice matched crystalline substrates for cubic nitride semiconductor growth
US8961687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a′) that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline InxGayAl1-x-yN alloy. The lattice parameter of the InxGayAl1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a′)=√2(a) or (a′)=(a)/√2. The semiconductor alloy may be prepared to have a selected band gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.