Transistors with different threshold voltages
US8962410B2 · kind B2 · utility
1Cited by
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17Claims
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Key dates
| Filing date | Oct 26, 2011 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jul 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
Abstract
A first transistor and a second transistor are formed with different threshold voltages. A first gate is formed over the first region of a substrate for a first transistor and a second gate over the second region for a second transistor. The first region is masked. A threshold voltage of the second transistor is adjusted by implanting through the second gate while masking the first region. Current electrode regions are formed on opposing sides of the first gate and current electrode regions on opposing sides of the second gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.