Method for fabricating capacitor with high aspect ratio
US8962437B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.