GaN HEMTs and GaN diodes
US8962461B2 · kind B2 · utility
2Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Dec 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectriclayer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.