Semiconductor device with self-aligned air gap and method for fabricating the same
US8962472B2 · kind B2 · utility
10Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Mar 16, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Apr 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a plurality of semiconductor structures over a substrate, forming an interlayer dielectric layer over the semiconductor structures, etching the interlayer dielectric layer, and defining open parts between the semiconductor structures to expose a surface of the substrate, forming sacrificial spacers on sidewalls of the open parts, forming conductive layer patterns in the open parts, and causing the conductive layer patterns and the sacrificial spacers to reach each other, and defining air gaps on the sidewalls of the open parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.