Magnetic random access memory cells having improved size and shape characteristics
US8962493B2 · kind B2 · utility
6Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2010 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Oct 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A manufacturing method to form a memory device includes: (1) forming a dielectric layer adjacent to a magnetic stack; (2) forming an opening in the dielectric layer; (3) applying a hard mask material adjacent to the dielectric layer to form a pillar disposed in the opening of the dielectric layer; and (4) using the pillar as a hard mask, patterning the magnetic stack to form a MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.