Film deposition method
US8962495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jun 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.