CMOS pixels comprising epitaxial layers for light-sensing and light emission

US8963169B2 · kind B2 · utility

Assignee

• Quantum Semiconductor LLP · US

Inventor

• Carlos J. R. P. Augusto · San Jose, US

Key dates

• Filing date: Jul 28, 2005
• Grant date: Feb 24, 2015
• Expiry date: Jun 23, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

Photonic devices monolithically integrated with CMOS are disclosed, including sub-100 nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.