Patent · US Active

Semiconductor chip with through hole vias

US8963319B2 · kind B2 · utility

2Cited by
2References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 14, 2012
Grant dateFeb 24, 2015
Priority date
Expiry dateApr 20, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/12042
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor chip includes a semiconductor substrate, a via and an insulating layer. The semiconductor substrate has a first major surface and a second major surface on opposite side from the first major surface. The semiconductor substrate is provided with a circuit section including an element and a wiring and a guard ring structure section surrounding the circuit section on the first major surface side. The via is provided in a via hole extending from the first major surface side to the second major surface side of the semiconductor substrate. The insulating layer is provided in a first trench extending from the first major surface side to the second major surface side of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.