Patent · US Active

Die-to-die gap control for semiconductor structure and method

US8963334B2 · kind B2 · utility

5Cited by
54References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 30, 2011
Grant dateFeb 24, 2015
Priority date
Expiry dateNov 20, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3512
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.