Programmable resistance-modulated write assist for a memory device
US8964452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Dec 26, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for improved write processes of a semiconductor memory are disclosed herein. By way of example, a programmable write assist can be provided that includes partially discharging a supply voltage applied to a memory cell. Partially discharging the supply voltage can improve write speeds to the memory cell, as well as improve reliability of the write process. A write assist circuit can cause the discharging in response to a resistance-modulated signal. Moreover, the resistance-modulated signal can be configured to control an amount or speed of the discharging of the supply voltage. Further, modulation control can be provided to mitigate discharging of the supply voltage beyond a target level, to reduce data loss in a target data cell or an adjacent data cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.