Sputtering device and sputtering method
US8968538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jul 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.