Patent · US Active

Sealed porous materials, methods for making them, and semiconductor devices comprising them

US8968864B2 · kind B2 · utility

3Cited by

1References

19Claims

0Family size

Assignees

IMEC · BE
UNIVERSITEIT GENT · BE

Inventors

Frederik Goethals · Evergem, BE
Pascal Van Der Voort · Wondelgem, BE
Isabel Van Driessche · Waasmunster, BE
Mikhail Baklanov · Veltem-Beisem, BE

Key dates

Filing date	Sep 18, 2012
Grant date	Mar 3, 2015
Priority date	—
Expiry date	Dec 9, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/249981
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.