Mikhail Baklanov
27Patents
9h-index
34Co-inventors
75Inventor score
Filing activity: Jun 19, 1996 → Nov 29, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6662631B2 | Method and apparatus for characterization of porous films | Physics | 25 | Expired |
| US6635964B2 | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof | Electricity | 23 | Expired |
| US6153484A | Etching process of CoSi.sub.2 layers | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6593251B2 | Method to produce a porous oxygen-silicon layer | Electricity | 14 | Expired |
| US6245489A | Fluorinated hard mask for micropatterning of polymers | Electricity | 14 | Expired |
| US6435008B2 | Apparatus and method for determining porosity | Physics | 11 | Expired |
| US6323555A | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof | Electricity | 11 | Expired |
| US9414445B2 | Method and apparatus for microwave treatment of dielectric films | Electricity | 11 | Active |
| US6255227A | Etching process of CoSi2 layers | Emerging Cross-Sectional Technologies | 9 | Expired |
| US8540890B2 | Protective treatment for porous materials | Electricity | 7 | Active |
| US6319736A | Apparatus and method for determining porosity | Physics | 6 | Expired |
| US9859102B2 | Method of etching porous film | Electricity | 5 | Active |
| US8961803B1 | Protection of porous substrates before treatment | Electricity | 5 | Active |
| US6844267B1 | Anisotropic etching of organic-containing insulating layers | Electricity | 5 | Expired |
| US7042091B2 | Fluorinated hard mask for micropatterning of polymers | Electricity | 4 | Expired |
| US9117666B2 | Method for activating a porous layer surface | Electricity | 4 | Active |
| US8968864B2 | Sealed porous materials, methods for making them, and semiconductor devices comprising them | Emerging Cross-Sectional Technologies | 3 | Active |
| US7458251B2 | Method for determining solvent permeability of films | Physics | 3 | Active |
| US9941151B2 | Method for producing an integrated circuit including a metallization layer comprising low K dielectric material | Electricity | 2 | Active |
| US6900140B2 | Anisotropic etching of organic-containing insulating layers | Electricity | 2 | Expired |
| US8974870B2 | Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance | Electricity | 1 | Active |
| US8158523B2 | Quantification of hydrophobic and hydrophilic properties of materials | Physics | 1 | Active |
| US7964039B2 | Cleaning of plasma chamber walls using noble gas cleaning step | Performing Operations; Transporting | 1 | Active |
| US7415902B2 | Method for the quantification of hydrophilic properties of porous materials | Physics | 0 | Active |
| US10236162B2 | Method of etching porous film | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.