Assist layers for EUV lithography
US8968989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Dec 23, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.