Method for forming isolation structure
US8969172B2 · kind B2 · utility
6Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2011 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Mar 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
[Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress.[Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.