Method and system for junction termination in GaN materials using conductivity modulation

US8969180B2 · kind B2 · utility

Assignee

• Avogy, Inc. · US

Inventors

• Hui Nie · Cupertino, US
• Andrew P. Edwards · San Jose, US
• Donald R. Disney · Cupertino, US
• Richard J. Brown · Los Gatos, US
• Isik C. Kizilyalli · San Francisco, US

Key dates

• Filing date: Mar 20, 2014
• Grant date: Mar 3, 2015
• Expiry date: Mar 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile.