Method of producing a semiconductor device having an interconnect through the substrate

US8969193B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Jochen Kraft · Bruck an der Mur, AT
• Franz Schrank · Graz, AT
• Martin Schrems · Langenbruck, DE

Key dates

• Filing date: Jul 31, 2013
• Grant date: Mar 3, 2015
• Expiry date: Jul 31, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor substrate (1) is provided on a main surface (14) with an intermetal dielectric (4) including metal planes (5) and on an opposite rear surface (15) with an insulation layer (2) and an electrically conductive connection pad (7). An etch stop layer (6) is applied on the intermetal dielectric to prevent a removal of the intermetal dielectric above the metal planes during subsequent method steps. An opening (9) having a side wall (3) and a bottom (13) is formed from the main surface through the substrate above the connection pad. A side wall spacer (10) is formed on the side wall by a production and subsequent partial removal of a dielectric layer (11). The insulation layer is removed from the bottom to uncover an area of the connection pad. A metal layer is applied in the opening and is provided for an interconnect through the substrate.