Transistor having an ohmic contact by screen layer and method of making the same
US8969882B1 · kind B1 · utility
4Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Aug 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a first portion and a screen layer over the first portion. The transistor includes a metal layer over the screen layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.