Patent · US Active

Transistors having a control gate and one or more conductive structures

US8969928B2 · kind B2 · utility

0Cited by
23References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2010
Grant dateMar 3, 2015
Priority date—
Expiry dateOct 23, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/519
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the dielectric at the particular level facilitate control of device characteristics of the transistor. The one or more conductive structures are between the control gate and at least one source/drain region of the transistor. The one or more conductive structures are electrically isolated from the control gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.