Semiconductor devices having increased contact areas between contacts and active regions and methods of fabricating the same
US8969936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Dec 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate including first and second junction regions, a word line buried in the substrate, a bit line provided over the word line to cross the word line, a first contact provided between the substrate and the bit line and electrically connected to the first junction region, and a second contact provided between the bit lines and electrically connected to the second junction region. An overlapping area of a lower portion of the second contact may be greater than an overlapping area of an upper portion of the second contact with respect to the second junction region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.