Semiconductor device and methods of manufacturing
US8969946B2 · kind B2 · utility
3Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jun 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes polysilicon layer and a metal silicide layer. The polysilicon layer is doped with carbon or phosphorous. The silicide layer is formed over the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.