Terminal structure, and semiconductor element and module substrate comprising the same
US8970037B2 · kind B2 · utility
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5References
5Claims
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Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.