Integrated circuit devices including electrode support structures and methods of fabricating the same
US8970039B2 · kind B2 · utility
8Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | May 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.