Method for manufacturing magnetoresistance effect element
US8970213B2 · kind B2 · utility
2Cited by
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6Claims
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Key dates
| Filing date | Jun 19, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jun 19, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing the functional element, a protective film covering an underlayer, a patterned multilayer film, and a patterned cap layer are formed, and the underlayer is then processed without newly forming a resist. Thereby, an electrode can be formed in steps less than ever before. Since the protective film formed on the patterned multilayer film and the patterned cap layer is used as a mask, the problem of the misregistration can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.