Low power phase change memory cell

US8971089B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Elijah V. Karpov · Portland, US
• Kuo-Wei Chang · Waltham, US
• Gianpaolo Spadini · Scotts Valley, US

Key dates

• Filing date: Jun 27, 2012
• Grant date: Mar 3, 2015
• Expiry date: Sep 7, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/24

Abstract

A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region. The phase change material may be an alloy of indium, antimony, and tellurium.