OPC method with higher degree of freedom
US8972909B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Sep 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K5/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method of performing an optical proximity correction (OPC) procedure that provides for a high degree of freedom by using an approximation design layer. In some embodiments, the method is performed by forming an integrated chip (IC) design having an original design layer with one or more original design shapes. An approximation design layer, which is different from the original design layer, is generated from the original design layer. The approximation design layer is a design layer that has been adjusted to remove features that may cause optical proximity correction (OPC) problems. An optical proximity correction (OPC) procedure is then performed on the approximation design layer. By performing the OPC procedure on the approximation design layer rather than on the original design layer, characteristics of the OPC procedure can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.