Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
US8974630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | May 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.