Patent · US Active

Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance

US8974870B2 · kind B2 · utility

1Cited by

3References

16Claims

0Family size

Assignee

IMEC · BE

Inventors

Mikhail Baklanov · Veltem-Beisem, BE
Quoc Toan Le · Belgrade, BE
Laurent Souriau · Heverlee, BE
Patrick Verdonck · Sterrebeek, BE

Key dates

Filing date	Sep 6, 2011
Grant date	Mar 10, 2015
Priority date	—
Expiry date	Jun 28, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/1047
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.