Super junction trench metal oxide semiconductor device and method of making the same

US8975153B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tai-I Yang · Hsinchu, TW
• Hong-Seng Shue · Zhubei City, TW
• Kun-Ming Huang · Taipei, TW
• Tzu-Cheng Chen · Taipei, TW
• Ming-Che Yang · Zhuolan Township, TW
• Po-Tao Chu · Taipei, TW

Key dates

• Filing date: Apr 19, 2013
• Grant date: Mar 10, 2015
• Expiry date: Apr 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of trenches in the hard mask layer and extending into the substrate. Each trench has at least one side wall and a bottom wall. The method further includes forming at least one barrier insulator layer along the at least one side wall and over the bottom wall of each trench, removing the at least one barrier insulator layer over the bottom wall of each trench, and filling the plurality of trenches with a semiconductor material of a second conductivity type.