Process for producing at least one deep trench isolation
US8975154B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
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Key dates
| Filing date | Oct 17, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Jun 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and forming, in the vicinity of the walls of the cavity, a silicon region doped with the dopant atoms. The method may further include filling the cavity with a filler material to form the at least one deep trench isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.