Method of forming a shallow trench isolation structure
US8975155B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2013 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Jul 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.