Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
US8975170B2 · kind B2 · utility
0Cited by
100References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2011 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Oct 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2225
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.