Method for manufacturing oxide layer
US8975194B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Nov 13, 2013 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed a method for manufacturing an oxide layer, applicable to a manufacture procedure of a field oxide layer of a CMOS transistor in the field of semiconductor manufacturing, the method includes: injecting a first gas satisfying a first predetermined condition into a processing furnace in which a first CMOS transistor semi-finished product formed with an N-well and a P-well is placed, and dry-oxidizing the first CMOS transistor semi-finished product into a second CMOS transistor semi-finished product; and injecting a second gas satisfying a second predetermined condition different from the first predetermined condition into the processing furnace, and wet-oxidizing the second CMOS transistor semi-finished product into a third CMOS transistor semi-finished product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.