Semiconductor device including oxide semiconductor film

US8975634B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventors

• Shunpei Yamazaki · Setagaya, JP
• Motoki NAKASHIMA · Atsugi, JP

Key dates

• Filing date: Sep 27, 2012
• Grant date: Mar 10, 2015
• Expiry date: Oct 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6755

Abstract

An object is to suppress occurrence of oxygen deficiency. An oxide semiconductor film is formed using germanium (Ge) instead of part of or all of gallium (Ga) or tin (Sn). At least one of bonds between a germanium (Ge) atom and oxygen (O) atoms has a bond energy higher than at least one of bonds between a tin (Sn) atom and oxygen (O) atoms or a gallium (Ga) atom and oxygen (O) atoms. Thus, a crystal of an oxide semiconductor formed using germanium (Ge) has a low possibility of occurrence of oxygen deficiency. Accordingly, an oxide semiconductor film is formed using germanium (Ge) in order to suppress occurrence of oxygen deficiency.