Transistor having an ohmic contact by gradient layer and method of making the same

US8975641B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chen-Hao Chiang · Houliao, TW
• Po-Chun Liu · Hsinchu, TW
• Chi-Ming Chen · Zhubei City, TW
• Chung-Yi Yu · Baoshan, TW
• Chia-Shiung Tsai · Jinshanmian, TW
• Xiaomeng Chen · Hsinchu, TW

Key dates

• Filing date: Aug 26, 2013
• Grant date: Mar 10, 2015
• Expiry date: Aug 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a gradient having a first concentration of a first material at an interface with the channel layer and a second concentration of the first material at a surface opposite the channel layer, and the first concentration is higher than the second concentration.