Integrated circuit comprising a capacitor with HSG metal electrodes
US8975682B2 · kind B2 · utility
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11References
7Claims
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Key dates
| Filing date | Aug 23, 2010 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | May 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.