Memory element and memory apparatus
US8976578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Sep 14, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element has a layered configuration, including a memory layer in which a magnetization direction is changed corresponding to information; the magnetization direction being changed by applying a current in a lamination direction of the layered configuration to record the information in the memory layer, a magnetization-fixed layer in which a magnetization direction is fixed, an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, and a perpendicular magnetic anisotropy inducing layer, the memory layer including a first ferromagnetic layer, a first bonding layer, a second ferromagnetic layer, a second bonding layer and a third ferromagnetic layer laminated in the stated order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.