Apparatus for supporting substrate and plasma etching apparatus having the same
US8980049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2008 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.