Ion implantation method and ion implantation apparatus
US8980654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jul 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30483
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.