SEN CORPORATION
23Patents
21Active
23Granted
49Portfolio score
Filing activity: May 20, 1999 → Dec 24, 2014 · 5 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6271620A | Acoustic transducer and method of making the same | Emerging Cross-Sectional Technologies | 40 | Expired |
| US8772741B2 | Ion implantation method and ion implantation apparatus | Electricity | 7 | Active |
| US7429743B2 | Irradiation system ion beam and method to enhance accuracy of irradiation | Electricity | 7 | Expired |
| US8692216B2 | Ion implantation apparatus and control method thereof | Electricity | 7 | Active |
| US9601314B2 | Ion implantation apparatus and ion implantation method | Electricity | 6 | Active |
| US7982192B2 | Beam processing apparatus | Electricity | 5 | Active |
| US9305784B2 | Ion implantation method and ion implantation apparatus | Electricity | 5 | Active |
| US9165772B2 | Ion implantation method and ion implantation apparatus | Electricity | 4 | Active |
| US7755067B2 | Ion implantation apparatus and method of converging/shaping ion beam used therefor | Electricity | 4 | Active |
| US9312163B2 | Impurity-doped layer formation apparatus and electrostatic chuck protection method | Emerging Cross-Sectional Technologies | 4 | Active |
| US8772142B2 | Ion implantation method and ion implantation apparatus | Electricity | 4 | Active |
| US8952340B2 | High-frequency acceleration type ion acceleration and transportation apparatus having high energy precision | Electricity | 4 | Active |
| US8987690B2 | High-energy ion implanter | Physics | 3 | Active |
| US7718980B2 | Beam processing system and beam processing method | Electricity | 3 | Active |
| US9023720B2 | Manufacturing method of semiconductor device | Electricity | 3 | Active |
| US9646837B2 | Ion implantation method and ion implantation apparatus | Electricity | 2 | Active |
| US8735855B2 | Ion beam irradiation system and ion beam irradiation method | Electricity | 2 | Active |
| US8163635B2 | Manufacturing method of semiconductor device | Electricity | 1 | Active |
| US8980654B2 | Ion implantation method and ion implantation apparatus | Electricity | 1 | Active |
| US9153405B2 | Ion source device and ion beam generating method | Electricity | 1 | Active |
| US7411709B2 | Beam processing system and beam processing method | Emerging Cross-Sectional Technologies | 0 | Active |
| US9153406B2 | Supporting structure and ion generator using the same | Electricity | 0 | Active |
| US8759801B2 | Ion implantation apparatus and ion implantation method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.