Charge sensors using inverted lateral bipolar junction transistors
US8980667B2 · kind B2 · utility
12Cited by
13References
14Claims
0Family size
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Key dates
| Filing date | Aug 3, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Nov 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/197
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming a sensor includes forming a base-region barrier in contact with a base substrate. The base-region barrier includes a monocrystalline semiconductor having a same dopant conductivity as the base substrate. An emitter and a collector are formed in contact with and on opposite sides of the base-region barrier to form a bipolar junction transistor. The collector, the emitter and the base-region barrier are planarized to form a level surface opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.