Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device
US8980679B2 · kind B2 · utility
5Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.