Resistive memory device and fabrication method thereof
US8980683B2 · kind B2 · utility
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Key dates
| Filing date | Jul 3, 2014 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jul 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.