Patent · US Active

MEMS devices

US8980698B2 · kind B2 · utility

1Cited by
7References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 10, 2009
Grant dateMar 17, 2015
Priority date
Expiry dateJul 21, 2030

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0145
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of manufacturing a MEMS device comprises forming a MEMS device element 14. A sacrificial layer 20 is provided over the device element and a package cover layer 24 is provided over the sacrificial layer. A spacer layer 13 is formed over the sacrificial layer and is etched to define spacer portions adjacent an outer side wall of the sacrificial layer. These improve the hermetic sealing of the side walls of the cover layer 24.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.