Manufacturing method of semiconductor device
US8980710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2014 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An impurity layer is formed in a first region of a semiconductor substrate, a silicon layer is grown on the semiconductor substrate, a tunnel gate insulating film is formed on a first silicon layer of a second region, a first conductor layer is formed on the tunnel gate insulating film, a first silicon oxide film and a silicon nitride film are formed on a second silicon layer, in a reduced pressure state, oxygen and hydrogen are independently introduced into an oxidation furnace to expose the silicon nitride film to active species of the oxygen and active species of the hydrogen to thereby oxidize the silicon nitride film to form a second silicon oxide film, a gate insulating film is formed on the silicon layer of the first region, a second conductor layer is formed on the second silicon oxide film and on the gate insulating film, the second conductor layer and the first conductor layer of the second region are patterned to form a stack gate of a nonvolatile memory transistor, and the second conductor layer above the first region is patterned to form a gate electrode of an MIS-type transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.