Methods of forming a semiconductor device
US8980731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jun 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.