Semiconductor light emitting device, light emitting module, and illumination apparatus
US8981396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.