Method and system for gallium nitride electronic devices using engineered substrates
US8981432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.